FQD17P06价格
参考价格：￥2.0016
型号：FQD17P06TM 品牌：Fairchild 备注：这里有FQD17P06多少钱，2026年最近7天走势，今日出价，今日竞价，FQD17P06批发/采购报价，FQD17P06行情走势销售排行榜，FQD17P06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：FQD17P06；-60V P-Channel MOSFET Description This advanced MOSFET technology has been es pecially tailored to reduce on-st ate resistance, and to provi de super ior sw itching performa nce and high avala nche energy strength . These device s are suitable for switched mode powe r supplies , audio ampl ifier, DC motor control, | EVVOSEMI 翊欧 |   | ||
丝印代码：FQD17P06；P-Channel QFET® MOSFET -60 V, -12 A, 135 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | ONSEMI 安森美半导体 | | ||
FQD17P06 | P-Channel QFET® MOSFET -60 V, -12 A, 135 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | ONSEMI 安森美半导体 | | |
FQD17P06 | 功率 MOSFET，P 沟道，QFET®，-60 V，-12 A，135 mΩ，DPAK 该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-12A, -60V, RDS(on)= 135mΩ（最大值）@VGS = -10 V, ID = -6A栅极电荷低（典型值：21nC)\n•低 Crss（典型值80pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested; | ONSEMI 安森美半导体 | | |
FQD17P06 | 60V P-Channel MOSFET Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | |
FQD17P06 | P-Channel QFET짰 MOSFET -60 V, -12 A, 135 m廓 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | |
FQD17P06 | -60V P-Channel MOSFET Description This advanced MOSFET technology has been es pecially tailored to reduce on-st ate resistance, and to provi de super ior sw itching performa nce and high avala nche energy strength . These device s are suitable for switched mode powe r supplies , audio ampl ifier, DC motor control, | EVVOSEMI 翊欧 | | |
FQD17P06 | P-Channel QFET MOSFET 文件：892.15 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | |
P-Channel QFET짰 MOSFET -60 V, -12 A, 135 m廓 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -60V, ID= -20A RDS(ON) | BYCHIP 百域芯 | | ||
60V P-Channel MOSFET 文件：812.35 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
P-Channel QFET MOSFET 文件：892.15 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓 文件：1.20347 Mbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | |
FQD17P06产品属性
- 类型
描述
- Pb-free：
Pb
- Status：
Active
- Channel Polarity：
P-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
-60
- VGS Max (V)：
±25
- VGS(th) Max (V)：
-4
- ID Max (A)：
-12
- PD Max (W)：
44
- RDS(on) Max @ VGS = 10 V(mΩ)：
135
- Qg Typ @ VGS = 10 V (nC)：
21
- Ciss Typ (pF)：
690
- Package Type：
DPAK-3/TO-252-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
26+ |
DPAK |
10548 |
原厂订货渠道,支持账期,一站式服务! |
|||
ONSEMI/安森美 |
25+ |
TO-252-3SC-63 |
32360 |
ONSEMI/安森美全新特价FQD17P06TM即刻询购立享优惠#长期有货 |
|||
Fairchild(飞兆/仙童) |
24+ |
6844 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
||||
ON |
2430+ |
TO-252 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON |
23+ |
TO252 |
2500 |
正规渠道,只有原装! |
|||
ON(安森美) |
23+ |
DPAK |
11429 |
公司只做原装正品,假一赔十 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
FAIRCHILD |
25+23+ |
TO252 |
14269 |
绝对原装正品全新进口深圳现货 |
|||
ON/安森美 |
22+ |
DPAK-3 |
9854 |
原装正品现货假一罚十 |
|||
ON |
25+ |
TO252 |
6000 |
全新原装现货、诚信经营! |
FQD17P06规格书下载地址
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DdatasheetPDF页码索引
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