100V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

功率 MOSFET，N 沟道，QFET®，100 V，1.7 A，350 mΩ，SOT-223

PROSLIC® SINGLE-CHIP FXS SOLUTION WITH INTEGRATED SERIAL INTERFACE (ISI)

Si32172/3/5 Features  Complete FXS solution in 5 x 7 mm  3-wire ISI combines PCM, SPI, and interrupt data  Performs all BORSCHT functions  Ideal for short to medium loops  Global programmability  Internal balanced or unbalanced ringing  Patented low power ringing  Simplified conf

SINGLE-CHIP DUAL PROSLIC®

Si32260/1 Features  Two complete FXS channels in a single 6 x 8 mm or 8 x 8 mm package  Performs all BORSCHT functions  Ideal for short- or long-loop applications  Ultra low power consumption  Internal balanced or unbalanced ringing  Patented low power ringing  Adaptive ringing  S

100V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

N-Channel QFET MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

N-Channel Enhancement Mode Power MOSFET

Application Load/Power Switching Interfacing Switching Logic Level Shift

N-Channel QFET MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，1.7 A，350 mΩ，SOT-223

7A, 100V N-CHANNEL POWER MOSFET

文件：224.23 Kbytes Page：6 Pages

7 Amps, 100 Volts N-CHANNEL POWER MOSFET

文件：170.23 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：262.79 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：262.79 Kbytes Page：7 Pages

7A, 100V N-CHANNEL POWER MOSFET

文件：219.08 Kbytes Page：5 Pages