FQT13N06价格
参考价格：￥1.2671
型号：FQT13N06LTF 品牌：Fairchild 备注：这里有FQT13N06多少钱，2026年最近7天走势，今日出价，今日竞价，FQT13N06批发/采购报价，FQT13N06行情走势销售排行榜，FQT13N06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQT13N06 | 60V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 |   | |
FQT13N06 | N-Channel QFET짰 MOSFET 60 V, 2.8 A, 140 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | |
FQT13N06 | 功率 MOSFET，N 沟道，QFET®， 60 V，2.8 A，140 mΩ，SOT-223 该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •2.8A, 60V, RDS(on)= 140mΩ（最大值）@VGS = 10 V, ID = 1.4A栅极电荷低（典型值：5.8nC)\n•低 Crss（典型值15pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested; | ONSEMI 安森美半导体 | | |
功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，2.8 A，110 mΩ，SOT-223 该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •2.8A, 60V, RDS(on)= 140mΩ（最大值）@VGS = 10 V, ID = 1.4A栅极电荷低（典型值：4.8nC)\n•低 Crss（典型值17pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested; | ONSEMI 安森美半导体 | | ||
60V LOGIC N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
N-Channel QFET짰 MOSFET 60 V, 2.8 A, 140 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
N-Channel QFET짰 MOSFET 60 V, 2.8 A, 140 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
N-Channel QFET짰 MOSFET 60 V, 2.8 A, 140 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FAIRCHILD 仙童半导体 | |
FQT13N06产品属性
- 类型
描述
- Pb-free：
Pb
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
60
- VGS Max (V)：
±25
- VGS(th) Max (V)：
4
- ID Max (A)：
2.8
- PD Max (W)：
2.1
- RDS(on) Max @ VGS = 10 V(mΩ)：
140
- Qg Typ @ VGS = 10 V (nC)：
5.8
- Ciss Typ (pF)：
240
- Package Type：
SOT-223-4/TO-261-4
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2450+ |
SOT-223 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHILD |
26+ |
SOT-223 |
30000 |
公司新到进口原装现货假一赔十 |
|||
ON/安森美 |
22+ |
SOT-223 |
20000 |
只做原装 |
|||
ON(安森美) |
2511 |
SOT-223 |
8484 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
|||
ON/安森美 |
2025+ |
SOT-223 |
5000 |
原装进口价格优 请找坤融电子! |
|||
FAIRCHILD |
26+ |
TSSOP-24 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
ON/安森美 |
25+ |
SOT-223 |
35056 |
ON/安森美全新特价FQT13N06L即刻询购立享优惠#长期有货 |
|||
FAIRC |
12+ |
SOT-223 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
ONSEMI/安森美 |
23+ |
SOT-223 |
4000 |
专业供应MOS/LDO/晶体管/有大量价格低 |
|||
FSC |
25+23+ |
SOT-223 |
28649 |
绝对原装正品全新进口深圳现货 |
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FQT13N06规格书下载地址
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2020-12-31
DdatasheetPDF页码索引
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