250V P-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

P 沟道，QFET® MOSFET，-250V，-6A，620mΩ

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-6 A、-250 V、RDS(on)= 0.62 Ω（最大值），需 VGS = -10 V、ID = -3 A栅极电荷低（典型值：29nC)\n•低 Crss（典型值27pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

P 沟道，QFET® MOSFET，-250 V，-6 A，620 mΩ

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。 这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。 这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-6 A, -250 V, RDS(on) = 620 mΩ（最大值）@ VGS = -10 V, ID = -3 A\n•低栅极电荷（典型值 29 nC)\n•低 Crss（典型值 27 pF）\n•100% 经过雪崩击穿测试;

250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

250V P-Channel MOSFET

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