250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

P 沟道 QFET® MOSFET -250 V，-9.4 A，620 mΩ

这些 P 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。 这一先进技术是专为最大限度地降低通态电阻，提供卓越开关性能，以及在雪崩和交换模式下承受高能量脉冲而定制的。 这些器件非常适合高效开关 DC/DC 转换器。 •-9.4 A、-250 V、RDS(on) = 620 mΩ（最大值）@ VGS = -10 V、ID = -4.7 A\n•低栅极电荷（典型值 29 nC)\n•低 Crss（典型值 27 pF)\n•100% 经过雪崩击穿测试;

P-Channel Enhancement Power MOSFET

Application « Reverse Battery protection » Load switch « Power management « PWM Application

250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

250V P-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

250V P-Channel MOSFET

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