100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5.5A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

100V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5.5A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

7 Amps, 100 Volts N-CHANNEL POWER MOSFET

文件：170.23 Kbytes Page：6 Pages

7A, 100V N-CHANNEL POWER MOSFET

文件：224.23 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：262.79 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：262.79 Kbytes Page：7 Pages

7A, 100V N-CHANNEL POWER MOSFET

文件：219.08 Kbytes Page：5 Pages