60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 32.6A, 60V, RDS(on)= 0.021Ω@VGS= 10 V • Low gate charge ( typical 24.5 nC) • Low Crss ( typical 90 pF) •

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • PFC stages • LCD & PDP TV • Power supply • Switch

60V N-Channel MOSFET

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

60V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=32.6A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.021Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 32.6A, 60V, RDS(on)= 0.021Ω@VGS= 10 V • Low gate charge ( typical 24.5 nC) • Low Crss ( typical 90 pF) •

TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS

TMOS E-FET Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOS) N–Channel Enhancement–Mode Silicon Gate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This

TMOS POWER FET 42 AMPERES 60 VOLTS

TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy

TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and

TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo