型号 功能描述 生产厂家 企业 LOGO 操作
FQPF17N08

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

Fairchild

仙童半导体

FQPF17N08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=11.2A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.115Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

FQPF17N08

80V N-Channel MOSFET

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=11.2A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

80V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

Fairchild

仙童半导体

80V LOGIC N-Channel MOSFET

ONSEMI

安森美半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.115Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

ISC

无锡固电

80V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

Fairchild

仙童半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

Fairchild

仙童半导体

80V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

Fairchild

仙童半导体

FQPF17N08产品属性

  • 类型

    描述

  • 型号

    FQPF17N08

  • 功能描述

    MOSFET 80V N-Channel QFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-24 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
25+
TO220F
100
原装正品,假一罚十!
FAIRCHILD/仙童
20+
TO-220F3L
36900
原装优势主营型号-可开原型号增税票
FAIRCHILD
06+
TO220
30
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FAICHILD
2016+
TO220
1800
只做原装,假一罚十,公司可开17%增值税发票!
FAIRCHILD
24+
TO-220F
8866
FAIRC
23+
TO-220F
7300
专注配单,只做原装进口现货
仙童
05+
TO-220F
3000
原装进口
onsemi(安森美)
24+
TO-220F
7828
支持大陆交货,美金交易。原装现货库存。
Fairchild/ON
22+
TO2203
9000
原厂渠道,现货配单
FAIRCHILD仙童
23+
TO-TO-220F
12300
原厂授权一级代理,专业海外优势订货,价格优势、品种

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