800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.55Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®，800 V，8 A，1.55 Ω，TO-220

800V N-Channel MOSFET

文件：1.29641 Mbytes Page：10 Pages

8.0A,800V Heatsink Planar N-Channel Power MOSFET

文件：2.54925 Mbytes Page：8 Pages

800V N-Channel MOSFET

文件：1.28564 Mbytes Page：12 Pages

800V N-CHANNEL MOSFET

DESCRIPTION The UTC8N80 is an N-channel mode Power FET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and co

Drain Current ?밒D= 8A@ TC=25C

文件：154.36 Kbytes Page：2 Pages

8A 800V N-channel Enhancement Mode Power MOSFET

文件：780.18 Kbytes Page：10 Pages

8A 800V N-channel Enhancement Mode Power MOSFET

文件：779.27 Kbytes Page：10 Pages

8A 800V N-channel Enhancement Mode Power MOSFET

文件：779.03 Kbytes Page：10 Pages