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FQP8N60C价格
参考价格：￥3.6746
型号：FQP8N60C 品牌：Fairchild 备注：这里有FQP8N60C多少钱，2026年最近7天走势，今日出价，今日竞价，FQP8N60C批发/采购报价，FQP8N60C行情走势销售排行榜，FQP8N60C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQP8N60C | 丝印代码：FQP8N60C；N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high | ONSEMI 安森美半导体 |   | |
FQP8N60C | 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | |
FQP8N60C | 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, | KERSEMI | | |
FQP8N60C | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=7.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
FQP8N60C | 600V N-Channel MOSFET 文件：1.30367 Mbytes Page：10 Pages | FAIRCHILD 仙童半导体 | | |
FQP8N60C | 功率 MOSFET，N 沟道，QFET®，600 V，7.5 A，1.2 Ω，TO-220 | ONSEMI 安森美半导体 | | |
N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand hi | ONSEMI 安森美半导体 | | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FAIRCHILD 仙童半导体 | | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM 文件：70.77 Kbytes Page：2 Pages | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM 文件：70.77 Kbytes Page：2 Pages | MOTOROLA 摩托罗拉 | |
FQP8N60C产品属性
- 类型
描述
- 型号
FQP8N60C
- 功能描述
MOSFET 600V N-Ch Q-FET advance C-Series
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO-220 |
155417 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD |
23+ |
TO-220 |
65400 |
||||
30 |
220 |
FAIRCHILD/仙童 |
7 |
92 |
|||
FSC |
2018+ |
TO-220 |
26976 |
代理原装现货/特价热卖! |
|||
FAIRCHILD/仙童 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCILD |
22+ |
TO-220 |
8000 |
原装正品支持实单 |
|||
ON/安森美 |
21+ |
TO-220(TO-220-3) |
8080 |
只做原装,质量保证 |
|||
FAIRCHILD/仙童 |
25+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Fairchild/ON |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
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FQP8N60C规格书下载地址
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FQP8N60C数据表相关新闻
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-15
DdatasheetPDF页码索引
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