位置：首页 > IC中文资料第2121页 > FQP8N60C_Q
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap | UTC 友顺 |   | ||
isc N-Channel Mosfet Transistor ·FEA TURES ·Drain Current –ID= 7.5A@TC=25℃ ·Drain Source Voltage-: VDSS= 600V(Min) ·Static Drain-SourceOn-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high effi | ISC 无锡固电 | | ||
7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：217.21 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：473.72 Kbytes Page：7 Pages | ZSELEC 淄博圣诺 | | ||
8A 600V N-channel Enhancement Mode Power MOSFET 文件：879.04 Kbytes Page：12 Pages | WXDH 东海半导体 | |
FQP8N60C_Q产品属性
- 类型
描述
- 型号
FQP8N60C_Q
- 功能描述
MOSFET 600V N-Ch Q-FET advance C-Series
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
24+ |
NA/ |
6100 |
原装现货,当天可交货,原型号开票 |
|||
士兰微 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
VBsemi |
21+ |
TO220F |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
UTC |
24+ |
TO220 |
6000 |
深圳原装现货价格优势 |
|||
ST/意法 |
25+ |
NA |
4 |
全新原装正品支持含税 |
|||
AAT/FSC |
18+ |
TO-220F |
5000 |
电解电容绝对现货库存,样品可出,量大价优 |
|||
UTC/友顺 |
25+ |
TO220 |
55000 |
UTC/友顺8N60-TA3-T即刻询购立享优惠#长期有货 |
|||
FAIRCHILD |
25+ |
TO-220/220F |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
士兰微 |
21+ |
TO-220 |
880000 |
明嘉莱只做原装正品现货 |
|||
FCS |
25+23+ |
TO220F |
17657 |
绝对原装正品全新进口深圳现货 |
FQP8N60C_Q规格书下载地址
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DdatasheetPDF页码索引
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