位置：首页 > IC中文资料第1191页 > FQP5N20L
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQP5N20L | 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
N-Channel Enhancement Mode Power MOSFET Description The 5N20A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l DC Motor Control and Class D Amplifier l Uninterruptible Power Supply (UPS) l Automotive | GOFORD 谷峰半导体 | | ||
N-Channel 200 V (D-S) MOSFET 文件：2.60721 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
Dual N-Channel 25-V (D-S) MOSFET 文件：1.69754 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Dual N-Channel Enhancement Mode MOSFET 文件：172.46 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
N-CHANNEL MOSFET in a TO-252 Plastic Package 文件：1.95544 Mbytes Page：11 Pages | FOSHAN 蓝箭电子 | |
FQP5N20L产品属性
- 类型
描述
- 型号
FQP5N20L
- 功能描述
MOSFET 200V N-Ch QFET Logic Level
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
21+ |
T0-220 |
2495 |
原装现货假一赔十 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
95 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHIL |
2015+ |
TO-220 |
12500 |
全新原装,现货库存长期供应 |
|||
FAIRCHILD/仙童 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FAIRC |
23+ |
TO-220 |
7300 |
专注配单,只做原装进口现货 |
|||
VBSEMI/台湾微碧 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
FAIRC |
23+ |
TO-220 |
7300 |
专注配单,只做原装进口现货 |
|||
FAIRCHILD |
24+ |
TO-220 |
8866 |
||||
Fairchild |
23+ |
33500 |
FQP5N20L规格书下载地址
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DdatasheetPDF页码索引
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