型号 功能描述 生产厂家&企业 LOGO 操作
FQP58N08

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP58N08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=57.5A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.024Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=64A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) =24mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conver

ISC

无锡固电

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

80V N-Channel MOSFET

文件:612.76 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

80V N-Channel MOSFET

文件:634.63 Kbytes Page:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP58N08产品属性

  • 类型

    描述

  • 型号

    FQP58N08

  • 功能描述

    MOSFET 80V N-Channel QFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-9 17:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRC
23+
TO-220
7300
专注配单,只做原装进口现货
FSC
23+
TO-247
28000
原装正品
FSC原装
25+23+
TO-247
23777
绝对原装正品全新进口深圳现货
ONSEMI/安森美
24+
TO-220
7800
全新原厂原装正品现货,低价出售,实单可谈
FAIRCHILD
24+
TO-220
8866
FAIRCHILD/仙童
23+
TO-220
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
VB
25+
TO-220
5000
原装正品,假一罚十!
Fairchild/ON
22+
TO2203
9000
原厂渠道,现货配单
FAIRC
23+
TO-220
7300
专注配单,只做原装进口现货
FAIRCHILD/仙童
25+
TO-220
45000
FAIRCHILD/仙童全新现货FQP58N08即刻询购立享优惠#长期有排单订

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