型号 功能描述 生产厂家 企业 LOGO 操作
FQA58N08

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

FAIRCHILD

仙童半导体

FQA58N08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=64A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) =24mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conver

ISC

无锡固电

FQA58N08

80V N-Channel MOSFET

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

80V N-Channel MOSFET

文件:612.76 Kbytes Page:8 Pages

FAIRCHILD

仙童半导体

80V N-Channel MOSFET

文件:634.63 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

FQA58N08产品属性

  • 类型

    描述

  • 型号

    FQA58N08

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
TO-3P
12369
样件支持,可原厂排单订货!
onsemi(安森美)
25+
TO-3P
12421
正规渠道,免费送样。支持账期,BOM一站式配齐
FAIRCHILD/仙童
2026+
TO-3P
439
原装正品,假一罚十!
仙童
05+
TO-247
4000
原装进口
FAIRCHILD
26+
SOT23
86720
全新原装正品价格最实惠 假一赔百
FSC
25+23+
TO-3P
16719
绝对原装正品全新进口深圳现货
FAIRCHILD
24+
TO-3PN
8866
FAIRCHILD
14+
TO-3P
42
FSC
22+
TO-3P
20000
公司只做原装 品质保障
FAIRC
23+
TO-3P
7300
专注配单,只做原装进口现货

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