300V N-Channel MOSFET

300V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.2A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N 沟道 QFET® MOSFET 300V，3.2A，2.2Ω

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •3.2A, 300V, RDS(on)= 2.2Ω（最大值）@VGS = 10 V, ID = 1.6A栅极电荷低（典型值：5.5nC）\n•低 Crss（典型值6pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

300V N-Channel MOSFET

Features • 3.2A, 300V, RDS(on) = 2.2Ω @VGS = 10 V • Low gate charge ( typical 5.5 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

300V N-Channel MOSFET

300V N-Channel MOSFET

300V N-Channel MOSFET

Features • 1.95A, 300V, RDS(on) = 2.2Ω @VGS = 10 V • Low gate charge ( typical 5.5 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.1 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING D

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.15 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING