型号 功能描述 生产厂家&企业 LOGO 操作
FQP1N60

QFET N-CHANNEL

FEATURES • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON): 9.3Ω (Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP1N60

600V N-Channel MOSFET

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

TGS

GOLD BONDED GERMANIUM DIODE

Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors

FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di

Littelfuse

力特

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar

FORMOSA

美丽微半导体

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

1.2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow

UTC

友顺

FQP1N60产品属性

  • 类型

    描述

  • 型号

    FQP1N60

  • 功能描述

    MOSFET 600V N-Channel QFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-9 16:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
TO-220
393
只做原厂渠道 可追溯货源
FAIRCHILD
24+
TO-220
8866
FAIRCHILD/仙童
23+
TO-220
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
VB
25+
TO-220
5000
原装正品,假一罚十!
Fairchild/ON
22+
TO2203
9000
原厂渠道,现货配单
FAIRC
23+
TO-220
7300
专注配单,只做原装进口现货
FAIRC
23+
TO-220
7300
专注配单,只做原装进口现货
FAIRCHILD
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
FSC
01+
TO-220
393
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FSC
21+
TO-220
393
原装现货假一赔十

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