位置:首页 > IC中文资料第3460页 > FQP1N60
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
FQP1N60 | QFET N-CHANNEL FEATURES • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON): 9.3Ω (Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
FQP1N60 | 600V N-Channel MOSFET DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy | TGS | ||
GOLD BONDED GERMANIUM DIODE Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di | Littelfuse 力特 | |||
Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar | FORMOSA 美丽微半导体 | |||
JEDEC DO-7 PACKAGE JEDEC DO-7 PACKAGE | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
1.2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow | UTC 友顺 |
FQP1N60产品属性
- 类型
描述
- 型号
FQP1N60
- 功能描述
MOSFET 600V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO-220 |
393 |
只做原厂渠道 可追溯货源 |
|||
FAIRCHILD |
24+ |
TO-220 |
8866 |
||||
FAIRCHILD/仙童 |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
VB |
25+ |
TO-220 |
5000 |
原装正品,假一罚十! |
|||
Fairchild/ON |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
FAIRC |
23+ |
TO-220 |
7300 |
专注配单,只做原装进口现货 |
|||
FAIRC |
23+ |
TO-220 |
7300 |
专注配单,只做原装进口现货 |
|||
FAIRCHILD |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
FSC |
01+ |
TO-220 |
393 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FSC |
21+ |
TO-220 |
393 |
原装现货假一赔十 |
FQP1N60规格书下载地址
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DdatasheetPDF页码索引
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