500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.265Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

18Amps,500VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC18N50isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedplanarstripeandDMOStechnologytoprovideperfectperformance. Thistechnologycanwithstandhighenergypulseintheavalancheandcommutationmode.Itcanprovideminimumon-stateresistancea

FastSwitching

•DESCRIPTION •DrainCurrentID=18A@TC=25℃ •DrainSourceVoltage :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.32Ω(Max) •FastSwitching •APPLICATIONS •Switchregulators •Switchingconverters,motordrivers,relaydrivers

18A,500VN-CHANNELPOWERMOSFET

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18A500VN-channelenhancedfieldeffecttransistor

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18A竊?00VN-CHANNELMOSFET

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