| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
1932+ |
TO-252 |
350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET |
21+ |
TO-252 |
360 |
原装现货假一赔十 |
|||
CET |
23+ |
TO252 |
15000 |
全新原装现货,价格优势 |
|||
CET |
25+23+ |
TO252 |
68158 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
CET |
24+ |
TO-252 |
90000 |
进口原装现货假一罚十价格合理 |
|||
台湾华瑞 |
19+ |
TO252 |
67803 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
SR |
23+ |
TO252D-PAK |
5000 |
原装正品,假一罚十 |
|||
CET |
24+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
CET/華瑞 |
24+ |
SOT-223 |
9600 |
原装现货,优势供应,支持实单! |
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FQP11N65C规格书下载地址
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2019-11-8
DdatasheetPDF页码索引
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