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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQI3P20TU | MOSFET P-CH 200V 2.8A I2PAK | ONSEMI 安森美半导体 |   | |
200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
QFET P-CHANNEL FEATURES • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON): 2.06Ω (Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
FQI3P20TU产品属性
- 类型
描述
- 型号
FQI3P20TU
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
25+ |
I2-PAKTO-262 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
FAIRCHILD |
24+ |
TO-262(I2PAK) |
8866 |
||||
onsemi(安森美) |
24+ |
I2PAK(TO-262) |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
FAIRCHILD/仙童 |
23+ |
I2-PAKTO-262 |
24190 |
原装正品代理渠道价格优势 |
|||
FSC |
05+MIX |
2699 |
优势货源原装正品 |
||||
FSC |
1438+ |
TO-262 |
1892 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FSC |
25+ |
TO-262 |
1650 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
24+ |
TO-262 |
6430 |
原装现货/欢迎来电咨询 |
||||
FAIRCHILD/仙童 |
23+ |
TO-262 |
2008000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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DdatasheetPDF页码索引
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