General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

Features

• -2.8A, -200V, RDS(on) = 2.7Ω @VGS = -10 V

• Low gate charge ( typical 6.0 nC)

• Low Crss ( typical 7.5 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability