位置：首页 > IC中文资料第3605页 > FQI3N80TU
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 |   | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-Channel Power MOSFET 文件：398.32 Kbytes Page：8 Pages | NELLSEMI 尼尔半导体 | | ||
Fast Switching 文件：49.87 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | |
FQI3N80TU产品属性
- 类型
描述
- 型号
FQI3N80TU
- 功能描述
MOSFET 800V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
FSC/ST |
23+ |
TO-220 |
3000 |
原装正品假一罚百!可开增票! |
|||
N/A |
24+ |
TO-220F |
5000 |
全新原装正品,现货销售 |
|||
UTC |
2024+ |
TO-252 |
500000 |
诚信服务,绝对原装原盘 |
|||
士兰微 |
21+ |
TO-220F |
425300 |
||||
友顺 UTC |
22+ |
TO-252 |
1050 |
原装正品，实单请联系 |
|||
士兰微 |
21+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
|||
UTC |
两年内 |
NA |
1442 |
实单价格可谈 |
|||
UTC/友顺 |
25+ |
TO252 |
55000 |
UTC/友顺3N80L-TN3-R即刻询购立享优惠#长期有货 |
|||
FSC |
15+ |
TO-220 |
8580 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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DdatasheetPDF页码索引
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