isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=48A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.039Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N 沟道 QFET® MOSFET 100V，48A，39mΩ

100V N-Channel MOSFET

文件：649.45 Kbytes Page：8 Pages

100V N-Channel MOSFET

文件：983.05 Kbytes Page：8 Pages

100V N-Channel MOSFET

文件：983.05 Kbytes Page：8 Pages

100V N-Channel MOSFET

文件：983.05 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=48A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =39mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 39mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

100V N-Channel MOSFET

文件：570.47 Kbytes Page：8 Pages