General Description

These P-Channel enhancement mode power field effect

transistors are produced using ON Semiconductor’s

proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor control.

Features

• -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V

• Low gate charge ( typical 12 nC)

• Low Crss ( typical 30 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• Qualified to AEC Q101

• RoHS Compliant