500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

Power MOSFET, N-Channel, QFET®, 500 V, 4 A, 1.4 Ω, DPAK

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy •4.0A, 500V, RDS(on) = 1.4Ω @VGS = 10 V \n•Low gate charge (typical 18 nC) \n•Low Crss (typical 15 pF) \n•Fast switching \n•100% avalanche tested \n•Improved dv/dt capability;

500V N-Channel MOSFET

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500V N-Channel MOSFET

文件：669.57 Kbytes Page：9 Pages

TO252-3L, JEDEC OPTION AA, PACKING CONFIGURATION Figure 1.0

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500V N-Channel MOSFET

500V N-Channel MOSFET

500V N-Channel MOSFET

Features • 4.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 8.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

500V N-Channel MOSFET

500V N-Channel MOSFET

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

PowerMOS transistor Isolated version of PHP8N50E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow