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FQD1N60价格
参考价格：￥1.5299
型号：FQD1N60CTM 品牌：Fairchild 备注：这里有FQD1N60多少钱，2024年最近7天走势，今日出价，今日竞价，FQD1N60批发/采购报价，FQD1N60行情走势销售排行榜，FQD1N60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQD1N60 | 600VN-ChannelMOSFET TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
FQD1N60 | 600VN-ChannelMOSFET 文件：549.28 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
N-ChannelQFET짰MOSFET600V,1.0A,11.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-ChannelQFET짰MOSFET600V,1.0A,11.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance | KERSEMI Kersemi Electronic Co., Ltd. |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-ChannelQFET짰MOSFET600V,1.0A,11.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600VN-ChannelMOSFET 文件：758.35 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600VN-ChannelMOSFET 文件：758.35 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600VN-ChannelMOSFET 文件：549.28 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi | LittelfuseLittelfuse Inc. 力特力特公司 |  | | |
SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 |  | | |
JEDECDO-7PACKAGE JEDECDO-7PACKAGE | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | | |
1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | |
FQD1N60产品属性
- 类型
描述
- 型号
FQD1N60
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET N D-PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
12+ |
TO-252 |
13 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
onsemi |
23+ |
TO-252AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ON/安森美 |
21+ |
TO-252-3 |
8800 |
公司只做原装正品 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
9980 |
原装进口特价供应 QQ 1304306553 更多详细咨询 库存 |
|||
ON/安森美 |
22+ |
TO-252-3 |
6000 |
只做原装,假一赔十 |
|||
FAIRCHILD/仙童 |
21+ |
TO252 |
1709 |
||||
ON/安森美 |
23+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
|||
ON/安森美 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
VB |
2019 |
TO252-2 |
55000 |
绝对原装正品假一罚十! |
|||
Fairchild |
1930+ |
N/A |
1949 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
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