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FQD12N20L价格
参考价格：￥2.1395
型号：FQD12N20LTM 品牌：Fairchild 备注：这里有FQD12N20L多少钱，2025年最近7天走势，今日出价，今日竞价，FQD12N20L批发/采购报价，FQD12N20L行情走势销售排行榜，FQD12N20L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQD12N20L | 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | Fairchild 仙童半导体 |   | |
FQD12N20L | isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 9.0 A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
FQD12N20L | 功率 MOSFET，N 沟道，逻辑电平，QFET®，200 V，9.0 A，280 mΩ，DPAK | ONSEMI 安森美半导体 | | |
200V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | Fairchild 仙童半导体 | | ||
N-Channel 200 V (D-S) MOSFET 文件：1.00995 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 200 V, ID= 8 A RDS(ON) | Bychip 百域芯 | | ||
200V Logic Level N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | Fairchild 仙童半导体 | | ||
200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
Fast Switching 文件：67.86 Kbytes Page：2 Pages | ISC 无锡固电 | |
FQD12N20L产品属性
- 类型
描述
- 型号
FQD12N20L
- 功能描述
MOSFET 200V N-Ch QFET Logic Level
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
19+ |
TO-252 |
16888 |
深圳原装进口无铅现货正规报关 |
|||
ONSemi |
2131/ |
DPAK |
10000 |
全新原装公司现货
|
|||
ON(安森美) |
24+ |
TO-252-2(DPAK) |
8048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
FAIRCHILD/仙童 |
25+ |
TO-252 |
35042 |
FAIRCHILD/仙童全新特价FQD12N20LTM即刻询购立享优惠#长期有货 |
|||
ON/安森美 |
23+ |
25850 |
新到现货,只有原装 |
||||
FAIRCHILD/仙童 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
onsemi(安森美) |
24+ |
TO-252 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
FAIRCHILD |
19+ |
TO-252 |
14250 |
||||
VBsemi(微碧) |
24+ |
N/A |
28630 |
原装正品现货支持实单 |
|||
NK/南科功率 |
2025+ |
TO-252-2 |
2500 |
国产南科平替供应大量 |
FQD12N20L规格书下载地址
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DdatasheetPDF页码索引
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