400V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

400V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

400V N-Channel MOSFET

Features • 5.5A, 400V, RDS(on) = 1.15Ω @ VGS = 10 V • Low gate charge ( typically 13 nC) • Low Crss ( typically 9.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

400V N-Channel MOSFET

Features • 4.2A, 400V, RDS(on) = 1.15 Ω @VGS = 10 V • Low gate charge ( typical 13nC) • Low Crss ( typical 9.5pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

400V N-Channel MOSFET

Features • 5.5A, 400V, RDS(on) = 1.15Ω @ VGS = 10 V • Low gate charge ( typically 13 nC) • Low Crss ( typically 9.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

400V N-Channel MOSFET

Features • 4.2A, 400V, RDS(on) = 1.15 Ω @VGS = 10 V • Low gate charge ( typical 13nC) • Low Crss ( typical 9.5pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability