型号 功能描述 生产厂家 企业 LOGO 操作
FQB3N60CTM

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

FAIRCHILD

仙童半导体

FQB3N60CTM

600V N-Channel MOSFET

文件:869.48 Kbytes Page:8 Pages

FAIRCHILD

仙童半导体

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

UTC

友顺

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:363.66 Kbytes Page:8 Pages

UTC

友顺

N-Channel Power MOSFET

文件:442.29 Kbytes Page:9 Pages

NELLSEMI

尼尔半导体

Fast Switching

文件:49.9 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件:1.08665 Mbytes Page:9 Pages

VBSEMI

微碧半导体

FQB3N60CTM产品属性

  • 类型

    描述

  • 型号

    FQB3N60CTM

  • 功能描述

    MOSFET N-CH/400V/ .5A/3.4OHM

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-1 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCILD
22+
TO-263
8000
原装正品支持实单
FAIRCHILD
24+
TO-263
8866
FAIRCHILD
23+
TO-263
10065
原装正品,有挂有货,假一赔十
FAIRCHILD/仙童
23+
D2-PAKTO-263
24190
原装正品代理渠道价格优势
FAIRCHILD
26+
SOP8-PH
86720
全新原装正品价格最实惠 假一赔百
ON
22+
TO-263
20000
公司只做原装 品质保障
FAIRCHILD/仙童
23+
D2-PAKTO-263
24190
原厂授权一级代理,专业海外优势订货,价格优势、品种
FSC
12+
TO-263
15000
全新原装,绝对正品,公司现货供应。
Fairchild/ON
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
onsemi(安森美)
25+
D2PAK(TO-263)
7786
正规渠道,免费送样。支持账期,BOM一站式配齐

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