位置：首页 > IC中文资料第5794页 > FQB19N10
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQB19N10 | 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 |   | |
FQB19N10 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=19A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv | ISC 无锡固电 | | |
FQB19N10 | 100V N-Channel MOSFET | ONSEMI 安森美半导体 | | |
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET | ONSEMI 安森美半导体 | | ||
100V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FAIRCHILD 仙童半导体 | |
FQB19N10产品属性
- 类型
描述
- 型号
FQB19N10
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
100V N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
仙童 |
06+ |
TO-263 |
3500 |
原装 |
|||
FAIRCHILD |
25+ |
SOT-263 |
32500 |
普通 |
|||
FAIRCHILD/仙童 |
23+ |
D2-PAKTO-263 |
24190 |
原装正品代理渠道价格优势 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
5002 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
FAIRCHILD/仙童 |
24+ |
TO-263(D2PAK) |
60000 |
全新原装现货 |
|||
FAIRCHILD/仙童 |
21+ |
D2-PAKTO-263 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
24+ |
TO-263 |
6430 |
原装现货/欢迎来电咨询 |
||||
FAIRCHILD/仙童 |
22+ |
TO263 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
FAIRCILD |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD/仙童 |
25+ |
TO263 |
154621 |
明嘉莱只做原装正品现货 |
FQB19N10规格书下载地址
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原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
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FQA9N90C，全新原装当天发货或门市自取0755-82732291.
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随时可发货
2019-9-17
DdatasheetPDF页码索引
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