型号 功能描述 生产厂家 企业 LOGO 操作
FQB19N10

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

Fairchild

仙童半导体

FQB19N10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=19A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

ISC

无锡固电

FQB19N10

100V N-Channel MOSFET

ONSEMI

安森美半导体

100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

Fairchild

仙童半导体

100V LOGIC N-Channel MOSFET

ONSEMI

安森美半导体

100V N-Channel MOSFET

DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and

UTC

友顺

100V N-Channel MOSFET

DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and

UTC

友顺

100V N-Channel MOSFET

DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and

UTC

友顺

100V N-Channel MOSFET

文件:232.7 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

文件:333.11 Kbytes Page:8 Pages

UTC

友顺

FQB19N10产品属性

  • 类型

    描述

  • 型号

    FQB19N10

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    100V N-Channel MOSFET

更新时间:2025-11-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
NA/
9146
原装现货,当天可交货,原型号开票
FAIRCHILD/仙童
25+
TO-263(D2PAK)
5896
原装正品,假一罚十!
FAIRCILD
22+
TO-263
8000
原装正品支持实单
FAIRCHILD
24+
TO-263(D2PAK)
8866
FAIRCHILD/仙童
23+
D2-PAKTO-263
24190
原装正品代理渠道价格优势
FAIRCHILD/仙童
25+
TO263
154621
明嘉莱只做原装正品现货
FAIRCHILD
0801+
TO-263(D2PAK)
5800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FAIRCHILD/仙童
2022+
TO-263(D2PAK)
5896
原厂代理 终端免费提供样品
NK/南科功率
2025+
TO-263-2
986966
国产
24+
TO-263
6430
原装现货/欢迎来电咨询

FQB19N10数据表相关新闻