型号 功能描述 生产厂家 企业 LOGO 操作

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Applications: ● Li-Battery Management System ● USB Power Delivery ● BLDC Drive ● Synchronous Rectifica

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 12.8A, RDS(ON) = 180mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

CET-MOS

华瑞

N-Channel 100-V (D-S) MOSFET

文件:773.51 Kbytes Page:6 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

文件:354.05 Kbytes Page:4 Pages

CET

华瑞

FQB13N10TM产品属性

  • 类型

    描述

  • 型号

    FQB13N10TM

  • 功能描述

    MOSFET 100V N-Ch QFET Logic Level

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-30 12:00:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET/華瑞
2511
TO-263
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
-
23+
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
50000
一级代理-主营优势-实惠价格-不悔选择
CET(华瑞)
2447
TO-263
105000
10个/管一级代理专营品牌!原装正品,优势现货,长期
CET
23+
TO-263
7300
专注配单,只做原装进口现货
哈里斯
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
CET
24+
50000
CET
24+
TO-263
90000
进口原装现货假一罚十价格合理
CET/華瑞
2407+
con
10750
只有原装!量大可以订!一片起卖!
CET/華瑞
2022+
TO-263
50000
原厂代理 终端免费提供样品

FQB13N10TM数据表相关新闻