N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand hig

N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high

400V N-CHANNEL MOSFET

DESCRIPTION The 11N40uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 0.52Ω@VGS= 10 V * Ultr

FQP11N40C / FQPF11N40C N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

400V N-Channel MOSFET

11.4A, 400V N-CHANNEL POWER MOSFET

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400V N-Channel MOSFET-T

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