isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.6A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.48Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

400V N-Channel MOSFET

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N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

FQP11N40C / FQPF11N40C N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10.5A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

400V N-Channel MOSFET

文件：1.22216 Mbytes Page：10 Pages

400V N-CHANNEL MOSFET

DESCRIPTION The 11N40uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 0.52Ω@VGS= 10 V * Ultr

FQP11N40C / FQPF11N40C N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

400V N-Channel MOSFET

11.4A, 400V N-CHANNEL POWER MOSFET

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400V N-Channel MOSFET-T

文件：2.39982 Mbytes Page：8 Pages