位置：首页 > IC中文资料第4122页 > FQAF7N60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQAF7N60 | 600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
iscN-ChannelMosfetTransistor •DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirem | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
7Amps竊?00VoltsN-ChannelMOSFET ■Description TheET7N60N-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. ■Features ●RDS(ON)=1.20Ω@VGS=10V ●Lowgatecha | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd |  | | |
7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
7.4Amps,600VoltsN-CHANNELMOSFET ■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
7A600VN-channelEnhancementModePowerMOSFET 文件：898.89 Kbytes Page：11 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 |  | |
FQAF7N60产品属性
- 类型
描述
- 型号
FQAF7N60
- 功能描述
MOSFET DISC BY MFG 7/03
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FCS |
17+ |
TO-3P |
9888 |
只做原装,现货库存 |
|||
FSC/ON |
23+ |
原包装原封□□ |
877 |
原装进口特价供应QQ1304306553更多详细咨询库存 |
|||
Fairchild/ON |
23+ |
SC94 |
8000 |
只做原装现货 |
|||
N/A |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FAIRCHILD |
23+ |
TO-3PTO-3PF |
8600 |
全新原装现货 |
|||
FSC |
21+ |
TO-3PF |
56000 |
公司进口原装现货 批量特价支持 |
|||
FAIRCHILD |
08+(pbfree) |
TO-247TO-3PTO-3PF |
8866 |
||||
FAIRC |
2023+ |
TO-3PF |
16800 |
芯为只有原装,公司现货 |
|||
MOT |
23+ |
DIP |
12000 |
全新原装假一赔十 |
|||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
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FQAF7N60规格书下载地址
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FQAF7N60数据表相关新闻
FQB55N10TM
FQB55N10TM
2024-1-16FQD10N20CTM
FQD10N20CTM 公司原装现货，假一赔十
2023-4-17FQA30N40 TO-3P FAIRCHILD/仙童 MOS(场效应管) 原装正品
原装正品现货供应0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-3-25FQA9N90C
FQA9N90C，全新原装当天发货或门市自取0755-82732291.
2020-6-25FQA8N100C全新原装现货
随时可发货
2019-9-17FQD16N25C
FQD16N25C，全新原装当天发货或门市自取0755-82732291.
2019-8-15
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