700V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 4.74A, 700V, RDS(on) = 1.5 Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 15 pF) • Fast switching •

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 4.74A@ TC=25℃ ·Drain Source Voltage- : VDSS=700V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

Simple Drive Requirements

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isc N-Channel MOSFET Transistor

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