600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=11.2A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-CHANNEL SILICON POWER MOSFETFeatures

文件：562.42 Kbytes Page：5 Pages

N-CHANNEL SILICON POWER MOSFET

文件：580.12 Kbytes Page：5 Pages

N-CHANNEL SILICON POWER MOSFET

文件：551.11 Kbytes Page：5 Pages

isc N-Channel MOSFET Transistor

文件：324.34 Kbytes Page：2 Pages

N-CHANNEL SILICON POWER MOSFET

文件：570.84 Kbytes Page：5 Pages