isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=19A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.365Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

功率MOSFET 600V-700V

N-CHANNEL SILICON POWER MOSFET

文件：525.87 Kbytes Page：5 Pages

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=19A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.365Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

功率MOSFET 600V-700V

N-CHANNEL SILICON POWER MOSFET

文件：568.25 Kbytes Page：5 Pages

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

N-CHANNEL SILICON POWER MOSFET

文件：570.84 Kbytes Page：5 Pages

600V N-Channel MOSFET

文件：716.54 Kbytes Page：7 Pages