900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=7.2A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.96Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

900V N-Channel MOSFET

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

功率 MOSFET，N 沟道，QFET®，900 V，7 A，1.1 Ω，TO-3PF

11 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high

Fast Switching

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900V N-Channel MOSFET

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900V N-Channel MOSFET

文件：817.11 Kbytes Page：9 Pages

900V N-Channel MOSFET

文件：1.8274 Mbytes Page：8 Pages