900V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

900V N-Channel MOSFET

900V N-Channel MOSFET

文件：817.11 Kbytes Page：9 Pages

900V N-Channel MOSFET

文件：823.6 Kbytes Page：8 Pages

Power MOSFET, N-Channel, QFET®, 900 V, 11.0 A, 1.1 Ω, TO-3P

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •11A, 900V, RDS(on)= 1.1Ω（最大值）@VGS = 10 V, ID = 5.5A栅极电荷低（典型值：60nC)\n•低 Crss（典型值23pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n•RoHS compliant;

功率 MOSFET，N 沟道，QFET®，900 V，11.0 A，1.1 Ω，TO-3P

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •11A, 900V, RDS(on)= 1.1Ω（最大值）@VGS = 10 V, ID = 5.5A栅极电荷低（典型值：60nC)\n•低 Crss（典型值23pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n•RoHS compliant;

FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11 A, 1.1 Ohm

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

900V N-Channel MOSFET

文件：817.11 Kbytes Page：9 Pages

900V N-Channel MOSFET

文件：823.6 Kbytes Page：8 Pages

900V N-Channel MOSFET

文件：823.6 Kbytes Page：8 Pages

900V N-Channel MOSFET

文件：817.11 Kbytes Page：9 Pages

900V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanch

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.