900V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

900V N-Channel MOSFET

文件：817.11 Kbytes Page：9 Pages

900V N-Channel MOSFET

文件：823.6 Kbytes Page：8 Pages

FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11 A, 1.1 Ohm

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

900V N-Channel MOSFET

文件：817.11 Kbytes Page：9 Pages

900V N-Channel MOSFET

文件：823.6 Kbytes Page：8 Pages

900V N-Channel MOSFET

文件：823.6 Kbytes Page：8 Pages

900V N-Channel MOSFET

文件：817.11 Kbytes Page：9 Pages

11 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high

Fast Switching

文件：54.69 Kbytes Page：2 Pages

900V N-Channel MOSFET

文件：823.6 Kbytes Page：8 Pages

900V N-Channel MOSFET

文件：817.11 Kbytes Page：9 Pages

900V N-Channel MOSFET

文件：1.8274 Mbytes Page：8 Pages