Description

These N-Channel enhancement mode power field

effect transistors are produced using ON Semiconductor’s

proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for low

voltage applications such as audio amplifier, high efficiency

switching for DC/DC converters, and DC motor control,

uninterrupted power supply.

• RDS(on)

= 18 mΩ (Max.) @ VGS

= 10 V, ID = 45 A

• Low Gate Charge (Typ. 220 nC)

• Low Crss (Typ. 200 pF)

• 100 Avalanche Tested

• 175°C Maximum Junction Memperature Rating

Features