500V N-Channel MOSFET

Features • 16A, 500V, RDS(on) = 0.32Ω @VGS = 10 V • Low gate charge ( typical 60 nC) • Low Crss ( typical 35 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.32Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

Optimized Switch for Discontinuous Current Mode Power Factor Correction

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16 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

500V, 16A N-Channel MOSFET

General Description The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabili

16A 500V N-channel enhanced field effect transistor

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16A竊?00V N-CHANNEL MOSFET

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isc N-Channel MOSFET Transistor

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