IntelliMAX??3A-Capable, Slew-Rate-Controlled Load Switch with True Reverse Current Blocking

Description The FPF1048 advanced load management switch targets applications requiring a highly integrated solution. It disconnects loads powered from the DC power rail ( Features ■ Input Voltage Operating Range: 1.5 V to 5.5 V ■ Typical RDS(ON): - 21 mΩ at VIN=5.5 V - 23 mΩ at VIN=4

IntelliMAX™ 3A 能力，摆率控制负载开关，带有真正的逆向电流阻隔

FPF1048B先进负载管理开关的目标应用为要求高集成解决方案的应用。 它将与DC电源轨(<6V)相连，具有严格关闭状态电流目标的负载和高负载电容（高达100µF）断开。 FPF1048B是由压摆率控制的低阻抗MOSFET开关（典型值23mΩ）和其他集成模拟功能组成。 压摆率控制的打开特性可防止电源轨上产生浪涌电流及过大的电压降。 FPF1048B有一个真反转电流阻塞(TRCB)功能，组织导通和关断状态期间从VOUT到VIN的多余反转电流。 出色的低关闭状态电流增益（最大值<1µA maximum）采用符合待机功率的要求。 输入电压范围介于1.5V至5.5VDC之间，可满足消费类、光学、医疗、

3 A-Capable, Slew-Rate-Controlled Load Switch

文件：707.14 Kbytes Page：14 Pages

Input Voltage Operating Range: 1.5 V to 5.5 V

Description The FPF1048 advanced load management switch targets applications requiring a highly integrated solution. It disconnects loads powered from the DC power rail ( Features ■ Input Voltage Operating Range: 1.5 V to 5.5 V ■ Typical RDS(ON): - 21 mΩ at VIN=5.5 V - 23 mΩ at VIN=4

IntelliMAX??3 A-Capable, Slew-Rate-Controlled Load Switch with True Reverse Current Blocking

文件：405.16 Kbytes Page：3 Pages

丝印代码：RA；3 A-Capable, Slew-Rate-Controlled Load Switch

文件：707.14 Kbytes Page：14 Pages

封装/外壳：6-UFBGA，WLCSP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH LOAD MGMT 6WLCSP 集成电路（IC） 配电开关，负载驱动器

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

3.3V LVDS 4-Bit Flow-Through High Speed Differential Receiver

General Description This quad receiver is designed for high speed interconnect utilizing Low Voltage Differential Signaling (LVDS) technology. The receiver translates LVDS levels, with a typical differential input threshold of 100mV, to LVTTL signal levels. LVDS provides low EMI at ultra low po

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 17.5V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A

DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

Summary BVCEO > 17.5V IC(cont) = 5A VCE(sat) Description Advanced process capability has been used to achieve this high performance device. Combining two NPN transistors in the SM-8 package provides a compact solution for the intended applications. Features • Dual NPN device

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps pulse current APPLICATIONS * LCD Backlight Convertors * Emergency Lighting * DC-DC Convertors