位置：首页 > IC中文资料 > FMY100N06T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FMY100N06T | 车载用功率MOSFET | Fuji 富士通 |   | |
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Fast Recovery Body Diode ● Lead-Free,RoHS Compliant Description: The ADM100N06 series MOSFETs is a new technology, which combines an innovative super junction t | ADV 爱德微 | | ||
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: These N-Channel enhancement mode power field effect transistors are using trench DMOS techno | ADV 爱德微 | | ||
OptiMOSTM Power-Transistor 文件：697.5 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
N-Channel Enhancement Mode Power Mosfet 文件：3.73479 Mbytes Page：7 Pages | FOSTER 福斯特半导体 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：433.03 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANKEN三肯 |
24+ |
NA/ |
8490 |
原装现货,当天可交货,原型号开票 |
|||
ROHM |
2016+ |
SOT153 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ROHM |
23+ |
SOT25/ |
20000 |
全新原装假一赔十 |
|||
SANKEN |
25+ |
TO220 |
3545 |
原装正品,假一罚十! |
|||
SANKEN |
25+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
|||
ROHM |
23+ |
原厂封装 |
11888 |
专做原装正品,假一罚百! |
|||
ROHM |
25+23+ |
Sot-153 |
28017 |
绝对原装正品全新进口深圳现货 |
|||
ROHM |
25+ |
SOT153 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
ROHM |
24+ |
SOT-153SOT-23-5 |
11700 |
新进库存/原装 |
|||
SanKen |
17+ |
TO220F-2 |
6200 |
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FMY100N06T规格书下载地址
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-13
DdatasheetPDF页码索引
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