N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

功率MOSFET 600V-700V

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability Applica

isc N-Channel MOSFET Transistor

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功率MOSFET 600V-700V

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

•75 lower Eoffcompared to previous generation combined with low conduction losses •Short circuit withstand time – 10 µs •Designed for: Motor controls, Inverter •NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable beh

POWER FIELD EFFECT TRANSISTOR

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Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：278.56 Kbytes Page：13 Pages

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：278.56 Kbytes Page：13 Pages