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FMMT491价格

参考价格:¥0.4866

型号:FMMT491AQTA 品牌:DIODES INCORPORATED 备注:这里有FMMT491多少钱,2026年最近7天走势,今日出价,今日竞价,FMMT491批发/采购报价,FMMT491行情走势销售排行榜,FMMT491报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FMMT491

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Low equivalent on-resistance; RCE(sat) 210mΩ at 1A COMPLEMENTARY TYPE - FMMT591 PARTMARKING DETAIL - 491

ZETEX

FMMT491

丝印代码:491;NPN Silicon Epitaxial Planar Transistor

FEATURES • Low saturation. • Complementary To FMMT591. • Excellent HFE Linearity. APPLICATIONS • Switching appilication.

BILIN

银河微电

FMMT491

Medium Power Transistor

■ Features ● VCE(sat) maximum specification improvement ● Reverse blocking specification improvement

KEXIN

科信电子

FMMT491

Medium power NPN transistor in SOT23

Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissipation • hFE Characterized up to 2A for High Current Gain Hold up • Complementary PNP Type: FMMT591 • Totally Lead-Free &

DIODES

美台半导体

FMMT491

NPN Silicon Planar High Performance Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM=0.5W(Tamb=25°C) • Collector current: Ic=1A • Epoxy meets UL 94 V-0 flammability rating • Moisure S

MCC

FMMT491

TRANSISTOR (NPN)

FEATURES • Low equivalent on-resistance

HTSEMI

金誉半导体

FMMT491

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Low equivalent on-resistance

DCCOM

道全

FMMT491

丝印代码:491;NPN Transistor

Features ● Low equivalent on-resistance ● Be complementaty with FMMT591

PJSEMI

平晶半导体

FMMT491

Plastic-Encapsulate Transistors

FEATURES • Low equivalent on-resistance

HOTTECH

合科泰

FMMT491

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features low equivalent On-resistance, Complementary pair with FMMT591. Applications Medium power amplifier applications.

FOSHAN

蓝箭电子

FMMT491

丝印代码:491;NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low saturation. ● Complementary To FMMT591. ● Excellent HFE Linearity. APPLICATIONS ● Switching appilication.

LUGUANG

鲁光电子

FMMT491

丝印代码:491;TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Low equivalent on-resistance

FS

FMMT491

GENERAL PURPOSE TRANSISTOR NPN SILICON EPITAXIAL PLANAR

DESCRIPTION The FMMT491 are available in SOT-23 package FEATURES  Low Saturation  Complementary to FMMT591  Excellent hFE Linearity  Availabl e in SOT-23 p ackage

AITSEMI

创瑞科技

FMMT491

丝印代码:491;Plastic-Encapsulate Transistors

FEATURES Low equivalent on-resistance

GWSEMI

唯圣电子

FMMT491

Single Bipolar Transistor

Features • VCE(sat) maximum specification improvement • Reverse blocking specification improvement Description Single Bipolar Transistor, NPN, 1A, 60V, SOT 23

MULTICOMP

易络盟

FMMT491

NPN小信号三极管

CHINABASE

创基电子

FMMT491

小信号双极型晶体管

MCC

FMMT491

晶体管

JSCJ

长晶科技

FMMT491

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

文件:318 Kbytes Page:3 Pages

RECTRON

丽正

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Feature • BVCEO > 40V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a low equivalent On-Resistance • 500mW Power Dissipation • hFE characterised up to 2A for high current gain hold up • Totally Lead-Free & Fully RoHS compliant (Notes 1 &

DIODES

美台半导体

Medium Power Transistor

Features • Very Low Equivalent Resistance, • SOT23 NPN Rsilicon planar

KEXIN

科信电子

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Very Low Equivalent Resistance, RCE(sat) 195mΩ at 1A COMPLEMENTARY TYPE - FMMT591A PARTMARKING DETAIL - 41A

ZETEX

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 40V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a low equivalent On-Resistance • 500mW Power Dissipation • hFE characterised up to 2A for high current gain hold up • Totally Lead-Free & Fully RoHS compliant (Notes 1 &

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 40V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a low equivalent On-Resistance • 500mW Power Dissipation • hFE characterised up to 2A for high current gain hold up • Totally Lead-Free & Fully RoHS compliant (Notes 1 &

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 40V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a low equivalent On-Resistance • 500mW Power Dissipation • hFE characterised up to 2A for high current gain hold up • Totally Lead-Free & Fully RoHS compliant (Notes 1 &

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 40V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a low equivalent On-Resistance • 500mW Power Dissipation • hFE characterised up to 2A for high current gain hold up • Totally Lead-Free & Fully RoHS compliant (Notes 1 &

DIODES

美台半导体

丝印代码:491;NPN Transistor

Features ● Low equivalent on-resistance

PJSEMI

平晶半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissip

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissipation • hFE Characterized up to 2A for High Current Gain Hold up • Complementary PNP Type: FMMT591 • Totally Lead-Free &

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissip

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissipation • hFE Characterized up to 2A for High Current Gain Hold up • Complementary PNP Type: FMMT591 • Totally Lead-Free &

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissip

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissipation • hFE Characterized up to 2A for High Current Gain Hold up • Complementary PNP Type: FMMT591 • Totally Lead-Free &

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissipation • hFE Characterized up to 2A for High Current Gain Hold up • Complementary PNP Type: FMMT591 • Totally Lead-Free &

DIODES

美台半导体

Silicon Epitaxial Planar Transistor

文件:309.17 Kbytes Page:4 Pages

BILIN

银河微电

NPN Transistors

文件:1.43249 Mbytes Page:3 Pages

KEXIN

科信电子

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:393.26 Kbytes Page:7 Pages

DIODES

美台半导体

丝印代码:41A;TRANSISTOR (NPN)

文件:364.22 Kbytes Page:5 Pages

RECTRON

丽正

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

文件:210.84 Kbytes Page:7 Pages

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

文件:210.84 Kbytes Page:7 Pages

DIODES

美台半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SS MID-PERF TRANSISTOR SOT23 T\u0026R 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

文件:210.84 Kbytes Page:7 Pages

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

文件:210.84 Kbytes Page:7 Pages

DIODES

美台半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 40V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

文件:210.84 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR

文件:380.19 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:303.57 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR

文件:380.19 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR

文件:380.19 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:303.57 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:303.57 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR

文件:380.19 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:393.26 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:393.26 Kbytes Page:7 Pages

DIODES

美台半导体

丝印代码:491;TRANSISTOR (NPN)

文件:497.15 Kbytes Page:5 Pages

RECTRON

丽正

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

MITSUBISHI

三菱电机

MOSFET N-Ch, Enhancement Mode High Speed Switch

MOSFET N–Ch, Enhancement Mode High Speed Switch

NTE

NPN BISS transistor

DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

PHILIPS

飞利浦

NPN BISS transistor

DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

PHILIPS

飞利浦

LOW POWER HIGH SPEED RS-485/RS-422 TRANSCEIVER

DESCRIPTION The ST491A is a low power transceiver for RS-485 and RS-422 communications. The device contains one driver and one receiver in full duplex configuration. The ST491A draws 5mA (typ.) of supply current when unloaded and operates from a single 5V supply. ■ LOW SUPPLY CURRENT: 5mA MAX ■

STMICROELECTRONICS

意法半导体

FMMT491产品属性

  • 类型

    描述

  • Compliance (Only Automotive supports PPAP):

    FMMT491Q

  • Product Type:

    NPN

  • IC (A):

    1 A

  • ICM (A):

    2 A

  • PD (W):

    0.5 W

  • hFE (min):

    100 Min

  • hFE(@ IC):

    0.5 A

  • hFE(Min 2):

    80

  • hFE(@ IC2):

    1 A

  • VCE (SAT)Max (mV):

    150 mV

  • VCE (SAT) (@ IC/IB) (A/m A):

    0.5/50

  • VCE (SAT)(Max.2):

    250 mV

  • VCE (SAT) (@ IC/IB2) (A/mA):

    1/100

  • fT (MHz):

    150 MHz

  • RCE(SAT):

    N/A mΩ

  • Packages:

    SOT23

更新时间:2026-5-14 15:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CJ长电
25+
SOT-23
15000
原厂原装,价格优势
ZETEX
16+
SOT23
10000
进口原装现货/价格优势!
ZETEX
23+
SOT-23
3000
原装正品假一罚百!可开增票!
DIODES/美台
25+
SOT-23
2000
全新原装现货特价销售,欢迎来电查询
DIODES/美台
2019+
SOT23
78550
原厂渠道 可含税出货
YANGJIE
24+
SOT-23
50000
原厂直销全新原装正品现货 欢迎选购
DIODES INC.
25+
SMD
918000
明嘉莱只做原装正品现货
DIODES
25+
SOT-23
3000
价格优势,支持实单
PJSEMI(平晶微)
2447
SOT-23
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
CJ/长电科技
23+
SOT-23
7000

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