FMMT491价格

参考价格:¥0.4866

型号:FMMT491AQTA 品牌:DIODES INCORPORATED 备注:这里有FMMT491多少钱,2024年最近7天走势,今日出价,今日竞价,FMMT491批发/采购报价,FMMT491行情走势销售排行榜,FMMT491报价。
型号 功能描述 生产厂家&企业 LOGO 操作
FMMT491

NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *Lowequivalenton-resistance;RCE(sat)210mΩat1A COMPLEMENTARYTYPE-FMMT591 PARTMARKINGDETAIL-491

Zetex

Zetex Semiconductors

Zetex
FMMT491

NPNSiliconEpitaxialPlanarTransistor

FEATURES •Lowsaturation. •ComplementaryToFMMT591. •ExcellentHFELinearity. APPLICATIONS •Switchingappilication.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
FMMT491

MediumPowerTransistor

■Features ●VCE(sat)maximumspecificationimprovement ●Reverseblockingspecificationimprovement

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
FMMT491

NPNSiliconPlanarHighPerformanceTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Powerdissipation:PCM=0.5W(Tamb=25°C) •Collectorcurrent:Ic=1A •EpoxymeetsUL94V-0flammabilityrating •MoisureS

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
FMMT491

TRANSISTOR(NPN)

FEATURES •Lowequivalenton-resistance

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
FMMT491

MediumpowerNPNtransistorinSOT23

Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissipation •hFECharacterizedupto2AforHighCurrentGainHoldup •ComplementaryPNPType:FMMT591 •TotallyLead-Free&

DIODESDiodes Incorporated

达尔科技

DIODES
FMMT491

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Lowequivalenton-resistance

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
FMMT491

NPNTransistor

Features ●Lowequivalenton-resistance ●BecomplementatywithFMMT591

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

PJSEMI
FMMT491

Plastic-EncapsulateTransistors

FEATURES •Lowequivalenton-resistance

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
FMMT491

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features lowequivalentOn-resistance,ComplementarypairwithFMMT591. Applications Mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
FMMT491

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●Lowsaturation. ●ComplementaryToFMMT591. ●ExcellentHFELinearity. APPLICATIONS ●Switchingappilication.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
FMMT491

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Lowequivalenton-resistance

FS

First Silicon Co., Ltd

FS
FMMT491

GENERALPURPOSETRANSISTORNPNSILICONEPITAXIALPLANAR

DESCRIPTION The FMMT491areavailableinSOT-23package FEATURES LowSaturation ComplementarytoFMMT591 ExcellenthFELinearity AvailableinSOT-23package

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
FMMT491

Plastic-EncapsulateTransistors

FEATURES Lowequivalenton-resistance

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI
FMMT491

SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN)

文件:318 Kbytes Page:3 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON

MediumPowerTransistor

Features •VeryLowEquivalentResistance, •SOT23NPNRsiliconplanar

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *VeryLowEquivalentResistance,RCE(sat)195mΩat1A COMPLEMENTARYTYPE-FMMT591A PARTMARKINGDETAIL-41A

Zetex

Zetex Semiconductors

Zetex

SOT23NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

Feature •BVCEO>40V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforalowequivalentOn-Resistance •500mWPowerDissipation •hFEcharacterisedupto2Aforhighcurrentgainholdup •TotallyLead-Free&FullyRoHScompliant(Notes1&

DIODESDiodes Incorporated

达尔科技

DIODES

40VNPNSILICONPLANARMEDIUMPOWERTRANSISTORINSOT23

Feature •BVCEO>40V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforalowequivalentOn-Resistance •500mWPowerDissipation •hFEcharacterisedupto2Aforhighcurrentgainholdup •TotallyLead-Free&FullyRoHScompliant(Notes1&

DIODESDiodes Incorporated

达尔科技

DIODES

40VNPNSILICONPLANARMEDIUMPOWERTRANSISTORINSOT23

Feature •BVCEO>40V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforalowequivalentOn-Resistance •500mWPowerDissipation •hFEcharacterisedupto2Aforhighcurrentgainholdup •TotallyLead-Free&FullyRoHScompliant(Notes1&

DIODESDiodes Incorporated

达尔科技

DIODES

40VNPNSILICONPLANARMEDIUMPOWERTRANSISTORINSOT23

Feature •BVCEO>40V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforalowequivalentOn-Resistance •500mWPowerDissipation •hFEcharacterisedupto2Aforhighcurrentgainholdup •TotallyLead-Free&FullyRoHScompliant(Notes1&

DIODESDiodes Incorporated

达尔科技

DIODES

40VNPNSILICONPLANARMEDIUMPOWERTRANSISTORINSOT23

Feature •BVCEO>40V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforalowequivalentOn-Resistance •500mWPowerDissipation •hFEcharacterisedupto2Aforhighcurrentgainholdup •TotallyLead-Free&FullyRoHScompliant(Notes1&

DIODESDiodes Incorporated

达尔科技

DIODES

NPNTransistor

Features ●Lowequivalenton-resistance

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

PJSEMI

60VNPNMEDIUMPOWERTRANSISTORINSOT23

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(SAT)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissip

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTORINSOT23

Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissipation •hFECharacterizedupto2AforHighCurrentGainHoldup •ComplementaryPNPType:FMMT591 •TotallyLead-Free&

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTORINSOT23

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(SAT)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissip

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTORINSOT23

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(SAT)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissip

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTORINSOT23

Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissipation •hFECharacterizedupto2AforHighCurrentGainHoldup •ComplementaryPNPType:FMMT591 •TotallyLead-Free&

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTORINSOT23

Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissipation •hFECharacterizedupto2AforHighCurrentGainHoldup •ComplementaryPNPType:FMMT591 •TotallyLead-Free&

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTORINSOT23

Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissipation •hFECharacterizedupto2AforHighCurrentGainHoldup •ComplementaryPNPType:FMMT591 •TotallyLead-Free&

DIODESDiodes Incorporated

达尔科技

DIODES

SiliconEpitaxialPlanarTransistor

文件:309.17 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

NPNTransistors

文件:1.43249 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

60VNPNMEDIUMPOWERTRANSISTORINSOT23

文件:393.26 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

TRANSISTOR(NPN)

文件:364.22 Kbytes Page:5 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON

40VNPNSILICONPLANARMEDIUMPOWERTRANSISTORINSOT23

文件:210.84 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

40VNPNSILICONPLANARMEDIUMPOWERTRANSISTORINSOT23

文件:210.84 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

40VNPNSILICONPLANARMEDIUMPOWERTRANSISTORINSOT23

文件:210.84 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SS MID-PERF TRANSISTOR SOT23 T\u0026R 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PAMDiodes Incorporated

龙鼎威

PAM

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 40V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PAMDiodes Incorporated

龙鼎威

PAM

40VNPNSILICONPLANARMEDIUMPOWERTRANSISTORINSOT23

文件:210.84 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

40VNPNSILICONPLANARMEDIUMPOWERTRANSISTORINSOT23

文件:210.84 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTOR

文件:380.19 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTORINSOT23

文件:303.57 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTOR

文件:380.19 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTOR

文件:380.19 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTORINSOT23

文件:303.57 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTORINSOT23

文件:303.57 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTOR

文件:380.19 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTORINSOT23

文件:393.26 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

60VNPNMEDIUMPOWERTRANSISTORINSOT23

文件:393.26 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

ROUNDINSTRUMENTATIONHANDLES

[KEYSTONE] ROUNDINSTRUMENTATIONHANDLES FERRULES HANDLEMOUNTINGSCREWS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

3M™PolishingFilms

ProductDescription 3M™PolishingFilms291X,298X,491X,498X,591Xand598Xarecomprisedofmicrongradedmineralthathasbeencoatedontoafibrousbacking.Designedtobreakdownintoaslurryduringusewithwater. Applications •MTfiberopticconnectorpolishingandwaferedgecleani

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

3M

PECLOutput

文件:141.82 Kbytes Page:2 Pages

OSCILENT

Oscilent Corporation

OSCILENT

LEDINDICATORS,DUMMYPLUGSANDHOLEPLUGS

文件:28.38 Kbytes Page:1 Pages

SWITCH

Switch Publishing Co.,Ltd.

SWITCH

POWERSUPPLYREJECTIONFORLOW-JITTERCLOCKS

文件:1.07345 Mbytes Page:8 Pages

SILABSSilicon Laboratories

芯科科技深圳芯科科技有限公司

SILABS

FMMT491产品属性

  • 类型

    描述

  • 型号

    FMMT491

  • 制造商

    Diodes Incorporated

  • 功能描述

    TRANSISTOR NPN SOT-23

  • 制造商

    Diodes Incorporated

  • 功能描述

    TRANSISTOR, NPN, SOT-23

  • 制造商

    Diodes Incorporated

  • 功能描述

    HIGH VOLTAGE TRANSISTOR, NPN, 60V; Transistor Polarity

更新时间:2024-4-26 20:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Diodes Incorporated
23+
TO-236-3,SC-59,SOT-23-3
30000
晶体管-分立半导体产品-原装正品
DIODES INC.
23+
SMD
918000
明嘉莱只做原装正品现货
DIODES
23+
SOT-23
68950
原装/支持-工厂-含税-拆样
21+
SOP-8
5000
优势代理渠道,原装正品,可全系列订货开增值税票
ZETEX
21+
SOT23
5841
原装现货假一赔十
DIODES/美台
23+
SOT-23
2000
全新原装现货特价销售,欢迎来电查询
ZETEX
23+
SOT-23
3000
原装正品假一罚百!可开增票!
ZETEX
2024+
SOT23
32560
原装优势绝对有货
长电
21+
SOT-23
50000
原厂订货价格优势,可开13%的增值税票
DIODES
23+
SOT23-3
7750
全新原装优势

FMMT491芯片相关品牌

  • ANACHIP
  • BOTHHAND
  • EUROQUARTZ
  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • nxp
  • POWERBOX
  • RECTRON
  • TAI-TECH
  • Winbond

FMMT491数据表相关新闻