FMMT491价格

参考价格:¥0.4866

型号:FMMT491AQTA 品牌:DIODES INCORPORATED 备注:这里有FMMT491多少钱,2025年最近7天走势,今日出价,今日竞价,FMMT491批发/采购报价,FMMT491行情走势销售排行榜,FMMT491报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FMMT491

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Low equivalent on-resistance; RCE(sat) 210mΩ at 1A COMPLEMENTARY TYPE - FMMT591 PARTMARKING DETAIL - 491

Zetex

FMMT491

NPN Silicon Epitaxial Planar Transistor

FEATURES • Low saturation. • Complementary To FMMT591. • Excellent HFE Linearity. APPLICATIONS • Switching appilication.

BILIN

银河微电

FMMT491

Medium Power Transistor

■ Features ● VCE(sat) maximum specification improvement ● Reverse blocking specification improvement

KEXIN

科信电子

FMMT491

NPN Silicon Planar High Performance Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM=0.5W(Tamb=25°C) • Collector current: Ic=1A • Epoxy meets UL 94 V-0 flammability rating • Moisure S

MCC

FMMT491

TRANSISTOR (NPN)

FEATURES • Low equivalent on-resistance

HTSEMI

金誉半导体

FMMT491

Medium power NPN transistor in SOT23

Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissipation • hFE Characterized up to 2A for High Current Gain Hold up • Complementary PNP Type: FMMT591 • Totally Lead-Free &

DIODES

美台半导体

FMMT491

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Low equivalent on-resistance

DCCOM

道全

FMMT491

NPN Transistor

Features ● Low equivalent on-resistance ● Be complementaty with FMMT591

PJSEMI

平晶半导体

FMMT491

Plastic-Encapsulate Transistors

FEATURES • Low equivalent on-resistance

HOTTECH

合科泰

FMMT491

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features low equivalent On-resistance, Complementary pair with FMMT591. Applications Medium power amplifier applications.

FOSHAN

蓝箭电子

FMMT491

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low saturation. ● Complementary To FMMT591. ● Excellent HFE Linearity. APPLICATIONS ● Switching appilication.

LUGUANG

鲁光电子

FMMT491

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Low equivalent on-resistance

FS

FMMT491

GENERAL PURPOSE TRANSISTOR NPN SILICON EPITAXIAL PLANAR

DESCRIPTION The FMMT491 are available in SOT-23 package FEATURES  Low Saturation  Complementary to FMMT591  Excellent hFE Linearity  Availabl e in SOT-23 p ackage

AITSEMI

创瑞科技

FMMT491

Plastic-Encapsulate Transistors

FEATURES Low equivalent on-resistance

GWSEMI

唯圣电子

FMMT491

Single Bipolar Transistor

Features • VCE(sat) maximum specification improvement • Reverse blocking specification improvement Description Single Bipolar Transistor, NPN, 1A, 60V, SOT 23

MULTICOMP

易络盟

FMMT491

NPN小信号三极管

CHINABASE

创基电子

FMMT491

小信号双极型晶体管

MCC

FMMT491

晶体管

JSCJ

长晶科技

FMMT491

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

文件:318 Kbytes Page:3 Pages

RECTRON

丽正国际

Medium Power Transistor

Features • Very Low Equivalent Resistance, • SOT23 NPN Rsilicon planar

KEXIN

科信电子

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Very Low Equivalent Resistance, RCE(sat) 195mΩ at 1A COMPLEMENTARY TYPE - FMMT591A PARTMARKING DETAIL - 41A

Zetex

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Feature • BVCEO > 40V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a low equivalent On-Resistance • 500mW Power Dissipation • hFE characterised up to 2A for high current gain hold up • Totally Lead-Free & Fully RoHS compliant (Notes 1 &

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 40V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a low equivalent On-Resistance • 500mW Power Dissipation • hFE characterised up to 2A for high current gain hold up • Totally Lead-Free & Fully RoHS compliant (Notes 1 &

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 40V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a low equivalent On-Resistance • 500mW Power Dissipation • hFE characterised up to 2A for high current gain hold up • Totally Lead-Free & Fully RoHS compliant (Notes 1 &

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 40V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a low equivalent On-Resistance • 500mW Power Dissipation • hFE characterised up to 2A for high current gain hold up • Totally Lead-Free & Fully RoHS compliant (Notes 1 &

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 40V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a low equivalent On-Resistance • 500mW Power Dissipation • hFE characterised up to 2A for high current gain hold up • Totally Lead-Free & Fully RoHS compliant (Notes 1 &

DIODES

美台半导体

NPN Transistor

Features ● Low equivalent on-resistance

PJSEMI

平晶半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissip

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissipation • hFE Characterized up to 2A for High Current Gain Hold up • Complementary PNP Type: FMMT591 • Totally Lead-Free &

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissip

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissip

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissipation • hFE Characterized up to 2A for High Current Gain Hold up • Complementary PNP Type: FMMT591 • Totally Lead-Free &

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissipation • hFE Characterized up to 2A for High Current Gain Hold up • Complementary PNP Type: FMMT591 • Totally Lead-Free &

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissipation • hFE Characterized up to 2A for High Current Gain Hold up • Complementary PNP Type: FMMT591 • Totally Lead-Free &

DIODES

美台半导体

Silicon Epitaxial Planar Transistor

文件:309.17 Kbytes Page:4 Pages

BILIN

银河微电

NPN Transistors

文件:1.43249 Mbytes Page:3 Pages

KEXIN

科信电子

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:393.26 Kbytes Page:7 Pages

DIODES

美台半导体

TRANSISTOR (NPN)

文件:364.22 Kbytes Page:5 Pages

RECTRON

丽正国际

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

文件:210.84 Kbytes Page:7 Pages

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

文件:210.84 Kbytes Page:7 Pages

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

文件:210.84 Kbytes Page:7 Pages

DIODES

美台半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SS MID-PERF TRANSISTOR SOT23 T\u0026R 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 40V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

文件:210.84 Kbytes Page:7 Pages

DIODES

美台半导体

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

文件:210.84 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR

文件:380.19 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:303.57 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR

文件:380.19 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR

文件:380.19 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:303.57 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:303.57 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR

文件:380.19 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:393.26 Kbytes Page:7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:393.26 Kbytes Page:7 Pages

DIODES

美台半导体

TRANSISTOR (NPN)

文件:497.15 Kbytes Page:5 Pages

RECTRON

丽正国际

ROUND INSTRUMENTATION HANDLES

[KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS

ETCList of Unclassifed Manufacturers

未分类制造商

3M™ Polishing Films

Product Description 3M™ Polishing Films 291X, 298X, 491X, 498X, 591X and 598X are comprised of micron graded mineral that has been coated onto a fibrous backing. Designed to break down into a slurry during use with water. Applications • MT fiber optic connector polishing and wafer edge cleani

3M

PECL Output

文件:141.82 Kbytes Page:2 Pages

OSCILENT

LED INDICATORS, DUMMY PLUGS AND HOLE PLUGS

文件:28.38 Kbytes Page:1 Pages

SWITCH

EXTENSION SPRINGS

文件:168.94 Kbytes Page:1 Pages

CENTURYSPRING

FMMT491产品属性

  • 类型

    描述

  • 型号

    FMMT491

  • 制造商

    Diodes Incorporated

  • 功能描述

    TRANSISTOR NPN SOT-23

  • 制造商

    Diodes Incorporated

  • 功能描述

    TRANSISTOR, NPN, SOT-23

  • 制造商

    Diodes Incorporated

  • 功能描述

    HIGH VOLTAGE TRANSISTOR, NPN, 60V; Transistor Polarity

更新时间:2025-11-19 8:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ZETEX
24+
SOT23
9800
一级代理/全新原装现货/长期供应!
CJ/长电
24+
SMD
9558
全新原装数量均有多电话咨询
ZETEX
16+
SOT23
10000
进口原装现货/价格优势!
DIODES(美台)
24+
SOT-23
1612
原厂订货渠道,支持BOM配单一站式服务
DIODES
25
SOT-23-3
3820
绝对原装正品
CJ/长电
14+
SMD
1500
原厂原装仓库现货,欢迎咨询
ZETEX
13+
SOT23
10000
原装现货价格有优势量大可以发货
CJ
2201
SOT-23
3000
原装现货17377264928微信同号
ZETEX
25+
SOT-23
14784
ZETEX原装特价FMMT491TA即刻询购立享优惠#长期有货
CJ原装长电
2021
SOT-23
182250
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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