Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature

• BVCEO > 60V

• IC = 1A Continuous Collector Current

• ICM = 2A Peak Pulse Current

• RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance

• 500mW Power Dissipation

• hFE Characterized up to 2A for High Current Gain Hold Up

• Complementary PNP Type: FMMT591Q

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP Capable (Note 4)