NPN BISS transistor

DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

NPN BISS transistor

NPN BISS transistor

DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

丝印代码：9A；NPN BISS transistor

FEATURES •High current (max. 1 A) •Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS •Battery powered units where high current and low power consumption are important. DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic pac

NPN BISS transistor

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 40V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 40V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN BISS transistor

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SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

MOSFET N-Ch, Enhancement Mode High Speed Switch

MOSFET N–Ch, Enhancement Mode High Speed Switch

LOW POWER HIGH SPEED RS-485/RS-422 TRANSCEIVER

DESCRIPTION The ST491A is a low power transceiver for RS-485 and RS-422 communications. The device contains one driver and one receiver in full duplex configuration. The ST491A draws 5mA (typ.) of supply current when unloaded and operates from a single 5V supply. ■ LOW SUPPLY CURRENT: 5mA MAX ■