丝印代码：ZC；SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR

SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR

NPN Silicon Epitaxial Planar Transistor

FEATURES ● NPN Silicon Planar. ● Switching Transistor.

TRANSISTOR (NPN)

FEATURES ● Switching Application

丝印代码：ZC；NPN Silicon Epitaxial Planar Transistor

FEATURES ● NPN Silicon Planar. ● Switching Transistor.

TRANSISTOR竊?NPN 竊

SOT-23 Plastic-Encapsulate Transistors FEATURES Power dissipation PCM： 0.33W（ Tamb=25℃） Collector current ICM： 0.2A Collector-base voltage V (BR) CBO： 30V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

Switching Transistors

Features ● Switching transistors.

晶体管

SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

文件：297.18 Kbytes Page：2 Pages

TRANSISTOR竊?NPN 竊

SOT-23 Plastic-Encapsulate Transistors FEATURES Power dissipation PCM： 0.33W（ Tamb=25℃） Collector current ICM： 0.2A Collector-base voltage V (BR) CBO： 30V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

Transistor

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features ● Epitaxial Planar Die Construction ● Complementary PNP Type Available (MMBT4126) ● Ideal for Medium Power Amplification and Switching

NPN (GENERAL PURPOSE TRANSISTOR)

GENERAL PURPOSE TRANSISTOR

Amplifier Transistors

Amplifier Transistor NPN Silicon

24 mm Discrete HFET

24 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5 at 2.3 GHz • Nominal Gain of 10.8 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

Amplifier Transistor(NPN Silicon)

文件：57.14 Kbytes Page：4 Pages