HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM

ID25 = 75 A VDSS = 100 V RDSon typ. = 18 mΩ Features • HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode • ISOPLUS i4-PACTM package -

Phase-Leg MOSFET Modules

·Vdss: 75V - 900V, Id(25): 45A - 1500A \n·Extremely Low Rds(on): 1.8 mOhms\n·dv/dt ruggedness. Fast reverse diode\n·low inductive current path\n·Kelvin source terminals for easy drive\n·2500 V rms Isolation with ceramic base plate;

HiPerFET Power MOSFET

Features • HiPerFET™ technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode • ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity bet

75, 100 and 120 Ampere Bridges o Provides 0.40 C/W Junction-to-Case, Thermal Resistance

75, 100 and 120 Ampere Bridges Provides 0.40°C/W Junction-to-Case, Thermal Resistance

75, 100 and 120 Ampere Three Phase Br idges o Provides 0.23 C/W Junction-to-Case, Thermal Resistance

75, 100 and 120 Ampere Three Phase Bridges Provides 0.23 °C/W Junction-to-Case, Thermal Resistance