Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor

Switching Circuit Feature 1) A super-minimold package hcuses 2 transistors. 2) Ideal for use in switching circuit.

Complex Transistor (Digital Transistors)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.31Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.31Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

Ku K-Brand Power GaAs Modules

Ku, K-Brand Power GaAs Modules

Ku K-Brand Power GaAs Modules

K-Band Power GaAs Modules

Ku K-Brand Power GaAs Modules

Ku, K-Brand Power GaAs Modules

Ku K-Brand Power GaAs Modules

Ku, K-Brand Power GaAs Modules

Ku K-Brand Power GaAs Modules

Ku K-Brand Power GaAs Modules

Ku K-Brand Power GaAs Modules

Ku K-Brand Power GaAs Modules

Power management (dual digital transistor)

The following characteristics apply to both the DTr1 and DTr2, however, the “–” sign on DTr2 values for the PNP type have been omitted. • Features 1) Includes a DTA124E and a DTC124E transistor in a single UMT and a SMT package. 2) Ideal for power switch circuits. 3) Mounting cost an

包装：盒 描述：CONN EDGE DUAL FMALE 40POS 0.100 连接器，互连器件 边缘板连接器

包装：托盘 描述：CONN EDGE DUAL FMALE 40POS 0.100 连接器，互连器件 边缘板连接器

金手指连接器

N-CHANNEL SILICON POWER MOSFET

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N-CHANNEL SILICON POWER MOSFET

文件：560.37 Kbytes Page：5 Pages

High Speed Frequency Measurement Circuit