600mA Silicon NPN Epitaxial Planar Transistor

600mA Silicon NPN Epitaxial Planar Transistor Features • High collector-emitterbreakdien voltage. (BVCEO = 140V~ 160V@IC=1mA) • This device is designed for general purpose high voltage amplifiers and gas discharge display driving • Epitaxial planar die construction • Complememntary PN

Low-Voltage DC Motor Speed Controller with Logic Circuit

Features • Wide operating voltage range :1.8 to 8V. • Has a logic circuit which operates in such a manner as 2 logic inputs cause FF, REW, GOVERNOR, BRAKE mode to occur. • Easy to vary speed at the GOVERNOR mode. • Turning OFF the strobe pin cause little ICC to flow (100µA). • Large starting

NPN (HIGH VOLTAGE TRANSISTOR)

NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR

Silicon Controlled Rectifiers

Description: The NTE5550 thru NTE5558 SCR’s are designed primarily for half–wave AC control applications, such as motor controls, heating controls and power supply crowbar circuits. Features: Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability

NPN high-voltage transistor

DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complement: PMBT5401. FEATURES • Low current (max. 300 mA) • Low voltage (max. 140 V). APPLICATIONS • Telephony.

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. PNP complement: PMST5401. FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony.